| PART |
Description |
Maker |
| CY14E101J2-SXIT CY14B101J1-SXI CY14B101J1-SXIT CY1 |
1-Mbit (128 K 8) Serial (I<sup>2</sup>C) nvSRAM
1-Mbit (128 K 8) Serial (I-2C) nvSRAM
|
Cypress
|
| CY14E101Q1A-SXIT CY14E101Q2A-SXI CY14E101Q2A-SXIT |
1-Mbit (128 K 8) Serial (SPI) nvSRAM
|
Cypress
|
| CY14B101I-SFXI CY14B101I-SFXIT |
1-Mbit (128 K 8) Serial (I2C) nvSRAM with Real Time Clock
|
Cypress
|
| M25P128-VMF6TPB M24512-DFMC6TG |
128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface
|
Micron Technology
Numonyx B.V
|
| N25Q128A11BSFH0E N25Q128A21BSFH0E N25Q128A31BSFH0E |
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| SC16C850L SC16C850LIBS SC16C850LIET157 SC16C850LIB |
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface; Package: SOT912-1 (TFBGA36); Container: Reel Pack, SMD, 7" 1 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PBGA36
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Single 1 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Multiple 1 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface; Package: SOT912-1 (TFBGA36); Container: Tray Pack, Bakeable, Multiple 1 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PBGA36
|
NXP Semiconductors N.V.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| AT24C11 AT24C11-10 AT24C11N-1 AT24C11N-10SU-2.7 AT |
1K, 2-wire Bus Serial EEPROM, Non-cascadable, high speed at medium voltage.
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
240 x 128 pixel format, CFL Backlight with power harness
2-Wire Serial EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
ATMEL[ATMEL Corporation]
Atmel Corp.
PROM
Atmel, Corp.
|
| N25Q128A11BF840E N25Q128A21BF840E N25Q128A31BF840E |
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
http://
Micron Technology
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| M36L0T7050B2 M36L0T7050T2 |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM
|
Numonyx
|
